US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 25 for "Delay locked loop and memory" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,839, issued on Feb. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Delay locked loop and memory" was invented by Siman Li (Hefei, China) and Yoonjoo Eom (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A delay locked loop includes a preprocessing module, a first regulable delay line, a second regulable delay line and a first regulation module. The preprocessing module is configured to receive an initial clock signal, preprocess the initial clock signal, and output a first clock signal and a second clock signal. The first regulable delay line is configured to receive the first clock signal, regulate and transmit th...