US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 18 for "Control method, semiconductor memory, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,348, issued on Feb. 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Control method, semiconductor memory, and electronic device" was invented by Yoonjoo Eom (Hefei, China), Lin Wang (Hefei, China), Zhiqiang Zhang (Hefei, China) and Yuanyuan Gong (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a control method, a semiconductor memory, and an electronic device. When the semiconductor memory is in a preset test mode, a first Model Register (MR) and a second MR related to a Data Pin (DQ) are allowed to directly define the impedance of a Data Mask Pin (DM). The DM does not ...