US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 11 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,225,714, issued on Feb. 11, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present application relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged at intervals and an isolation structure located between the active regions; a word line (WL) trench, penetrating through the active region and the isolation structure along a first di...