US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Three-dimensional memory and formation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,312, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Three-dimensional memory and formation method thereof" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Yunsong Qiu (Hefei, China), Weiping Bai (Hefei, China), Yi Jiang (Hefei, China) and Xingsong Su (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a three-dimensional memory provided by embodiments includes: forming a substrate and a stacked layer, where the stacked layer includes first semiconductor layers and second semiconductor layers alternately stacked, a thickness of the second semiconductor layer...