US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,315, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Min Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged in an array and an isolation structure separating the active regions, where the substrate has a first surface and a second surface opposite to each other; a buried word line structure, loc...