US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 10 for "Delay control circuit, delay control method and memory" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,613, issued on Feb. 10, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Delay control circuit, delay control method and memory" was invented by Zequn Huang (Hefei, China) and Kai Sun (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A delay control circuit includes a delay circuit. The delay circuit is configured to receive an initial command signal, and to perform a non-clock-triggered delay processing on the initial command signal to obtain a target command signal. The initial command signal is generated based on an ECS operation mode, a time interval between the target command signal and the initial command signal me...