US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 9 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,544, issued on Dec. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming same" was invented by Peimeng Wang (Hefei, China) and Ning Xi (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure formed by the method for forming the semiconductor structure includes: a substrate, on which an insulating layer is formed; metal conductive layers located on the insulating layer; and an isolation structure located between two adjacent ones of the metal conductive layers."

The patent was filed on Sept. 22, 2022, under Application No. 17/950,247.

*For further informat...