US Patent Issued to Changxin Memory Technologies on Dec. 9 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,536, issued on Dec. 9, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Semiconductor structure and method for forming same" was invented by Shijie Bai (Hefei, China), Yexiao Yu (Hefei, China) and Zhongming Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and the method for forming the same are provided. The method includes: providing a substrate including an active region; forming a word line in the substrate including a first portion and a second portion located at the end of the first portion, wherein the second portion of the word line protrudes from the first portion of the word line al...