US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 9 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,540, issued on Dec. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Luguang Wang (Hefei, China) and Heng-Chia Chang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method for fabricating the same. The semiconductor structure includes: a substrate; bit lines positioned in the substrate, where each of the bit lines includes a conductive body and a dielectric layer, the conductive body includes a body portion and a plurality of contact portions, the body portion extend along a first direction, th...