US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 9 for "Semiconductor structure, method for manufacturing same, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,539, issued on Dec. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing same, and memory" was invented by Youming Liu (Hefei, China), Deyuan Xiao (Hefei, China), Yi Jiang (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: providing a substrate; and forming a plurality of columns of stacked structures arranged at intervals in a first direction on the substrate, each stacked structures including a plurality of first sacrificial layers and a plurality of active layers that are stacke...