US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 9 for "Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,537, issued on Dec. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory" was invented by Mengmeng Yang (Hefei, China) and Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provide is a method for manufacturing a semiconductor structure, a semiconductor structure, and a semiconductor memory. The method includes the following operations. A substrate is provided. Multiple silicon pillars are formed in the substrate, and extend along a first direction. In the first direction, each of the silicon pillars includes a first ...