US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 9 for "Electro-static protection structure, silicon controlled rectifier and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,618, issued on Dec. 9, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Electro-static protection structure, silicon controlled rectifier and semiconductor memory" was invented by Qian Xu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electro-static protection structure includes a substrate, a transistor formed in the substrate, and a capacitor. A first pole of the transistor is connected with an electro-static terminal, and a second pole of the transistor and a gate electrode of the transistor are connected with a discharge terminal. A first pole of the capacitor is connected with the substrate, and a second pole o...