US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure with void and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,374, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure with void and manufacturing method thereof" was invented by Ming Cheng (Hefei, China), Xing Jin (Hefei, China) and Ran Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: providing a substrate and a bit line structure located on the substrate, the bit line structure including a top dielectric layer and capacitive contact holes being provided on two opposite sides of the bit line structure; forming a first spacer covering a sidewall of the top dielectric layer bet...