US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure and method for preparing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,320, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for preparing semiconductor structure" was invented by Yuanhao Gao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for preparing a semiconductor structure are provided. The method includes: a composite hard mask layer is formed on an etching layer, the composite hard mask layer including a hard mask layer and an etching stop layer surrounded by the hard mask layer; a first target pattern and a first redundant pattern are formed in the composite hard mask layer; a remaining p...