US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure and method for preparing same" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,895, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefe, China).

"Semiconductor structure and method for preparing same" was invented by Xiang Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor structure, including: providing a structure to be processed which includes a semiconductor substrate, semiconductor fins extending along a first direction on the semiconductor substrate, and a first filling layer which fills gaps between two adjacent ones of the semiconductor fins; forming a first protective layer on the structure to be processed, and patterning the first protective ...