US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,968, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor structure and a method for manufacturing the same. The method includes the following operations. A trench is formed in a substrate. A sacrificial dielectric layer is filled in the trench. The sacrificial dielectric layer is etched gradually to gradually expose a sidewall of the trench, and at least part of the exposed sidewall of the trench is oxidized to form an oxide dielectric layer, ...