US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,882, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for forming semiconductor structure" was invented by Chao Lin (Hefei, China) and Xiaojie Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes: a base is provided, the base including a first area and a second area located outside the first area, the first area including stack structures and first isolation structures arranged alternately in a first direction, each stack structure including first semiconductor layers and second semiconductor layers stacked onto ...