US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure and method for fabricating same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,893, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for fabricating same" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Weiping Bai (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a method for fabricating a semiconductor structure, relating to the field of semiconductor technology. The semiconductor structure includes a substrate, a capacitor structure, a transistor structure, a bit line and a word line; and the substrate includes a semiconductor layer and a...