US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,881, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Youming Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The manufacturing method includes: forming a first insulating layer on a substrate, a plurality of active pillars are arranged at intervals along a first direction and a second direction in the first insulating layer; partially removing the first insulating layer, to for...