US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,916, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method therefor" was invented by Gongyi Wu (Hefei, China), Yachao Xu (Hefei, China), Xinran Liu (Hefei, China) and Juncai Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a manufacturing method therefor are provided. The semiconductor structure includes: a substrate; a plurality of connection pads disposed on a surface of the substrate; and a plurality of electrode pillars, disposed on the substrate and connected to the plurality of connection pads in a one-to-one correspond...