US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor structure, method for manufacturing semiconductor structure, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,894, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for manufacturing semiconductor structure, and memory" was invented by Ning Xi (Hefei, China) and Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a method for manufacturing a semiconductor structure, and a memory are provided. The semiconductor structure includes: a source and a drain which are arranged in a substrate; a gate dielectric layer arranged in the substrate and covering a sidewall and a bottom portion of a trench defined between the source and the drain; a gate struct...