US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Semiconductor device layout structure, method for forming same, and test system" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,373, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device layout structure, method for forming same, and test system" was invented by Yizhi Zeng (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductor, and disclose a semiconductor device layout structure, a method for forming the same, and a test system. The semiconductor device layout structure includes: an active layout layer including active pattern regions arranged along a first direction; device layout sublayers, where each of the device layout sublayer includes a gate pattern region; and...