US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Refresh address counting circuit and method, refresh address read-write circuit and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,141, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Refresh address counting circuit and method, refresh address read-write circuit and electronic device" was invented by Xian Fan (Hefei, China), Yinchuan Gu (Hefei, China), Xianlei Cao (Hefei, China), Yu Yang (Hefei, China) and Hsin-Cheng Su (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A refresh address counting circuit, a refresh address counting method, and a refresh address read-write circuit are provided. The refresh address counting circuit includes: a self-oscillation clock generation circuit, configured to generate, in each of refresh cyc...