US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Method of manufacturing a semiconductor structure comprising forming an insulating material layer with gaps therein in isolation region and manufactured semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,889, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing a semiconductor structure comprising forming an insulating material layer with gaps therein in isolation region and manufactured semiconductor structure" was invented by Kui Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base; a plurality of channel pillars perpendicularly provided on the base; a plurality of parallel bit lines, each of the bit lines wrapping lower parts of one column ...