US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Method for processing semiconductor structure and method for forming word line structure" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,326, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for processing semiconductor structure and method for forming word line structure" was invented by Runping Wu (Hefei, China), Jun Zhang (Hefei, China), Li Ma (Hefei, China), Taegyun Kim (Hefei, China) and Soonbyung Park (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing a semiconductor structure and a method for forming a word line structure are provided. The method for processing the semiconductor structure includes: providing a semiconductor structure including a groove and a metal layer located in the groove, where a...