US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Method for manufacturing semiconductor structure having growth rate on conductive layer greater than on dielectric layer" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,884, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure having growth rate on conductive layer greater than on dielectric layer" was invented by Lin Tang (Hefei, China) and Mingguang Zuo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided. The substrate is provided with a first trench. A dielectric layer is formed on a bottom and sidewalls of the first trench. A first conductive layer is formed on the dielectric layer. A part of the first conductiv...