US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Method for manufacturing capacitor array, capacitor array, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,917, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing capacitor array, capacitor array, and semiconductor device" was invented by Liutao Zhou (Hefei, China) and Shuo Pan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a capacitor array includes: providing a substrate provided with a device area configured for forming a capacitor and a peripheral area located at a periphery of the device area; forming successively a first support layer and a first sacrificial layer on the substrate; etching the first sacrificial layer of the peripheral area to expose...