US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Method for forming semiconductor device and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,885, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming semiconductor device and semiconductor device" was invented by Shuai Guo (Hefei, China) and Mingguang Zuo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes: providing a substrate and a stacked structure covering the substrate and including alternately stacked dielectric layers and sacrificial layers; forming multiple isolation layers extending in a first direction and arranged in a second direction in the stacked structure, the first direction being perpendicular to the substrat...