US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Memory structure and manufacturing method thereof, and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,890, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory structure and manufacturing method thereof, and semiconductor structure" was invented by Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure, including a columnar epitaxial structure, a grounding structure, a bit line structure, a columnar capacitor structure, and a word line structure. The columnar epitaxial structure extends in a first direction; the grounding structure wraps one end of the columnar epitaxial structure; the bit line structure wraps the other end of the column...