US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 30 for "Dram structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,883, issued on Dec. 30, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Dram structure and method for forming same" was invented by Jingwen Lu (Hefei, China) and Xiaoling Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the same are provided. The method for forming the semiconductor structure includes: providing a substrate; etching the substrate to form multiple active areas, trenches each positioned between adjacent active areas, and air gaps positioned below the active areas; and forming a filler layer filling at least each of the trenches."

The patent was fil...