US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 23 for "Semiconductor structure and preparation method of semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,030, issued on Dec. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and preparation method of semiconductor structure" was invented by Wenli Zhao (Hefei, China) and Jie Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method of a semiconductor structure includes: a substrate including a groove structure is provided; a first isolation layer, a second isolation layer and a third isolation layer are sequentially formed on a bottom and sidewalls of the groove structure, where an upper surface of the first isolation layer is lower than an upper surface of the second isolation la...