US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 23 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,403, issued on Dec. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Zhihao Song (Hefei, China) and Zhonghua Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate; a first dielectric layer, located on the substrate; and a pad structure, located on the first dielectric layer. The first dielectric layer has at least one support layer. The pad structure is located above the support layer. A material strength of the support layer is greater than a material strength of the first dielectric layer."

The...