US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 23 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,013, issued on Dec. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Meng Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor includes: providing a substrate; forming a polysilicon layer on the substrate, a surface, away from the substrate, of the polysilicon layer having a native oxide; and performing a nitriding treatment to the native oxide, to nitrogenize the native oxide into a silicon oxynitride layer. The native oxide is nitrogenized into the silicon oxynitride layer."

The patent was filed o...