US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 23 for "Method and system for improving uniformity of plating film on wafer" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,787, issued on Dec. 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method and system for improving uniformity of plating film on wafer" was invented by Yulong Gao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and system for improving uniformity of plating film on the wafer are provided. The method includes: providing a plating device; providing a wafer, the plating device being configured to coat the wafer; monitoring currents at different areas of a surface of the wafer in a plating process; when a difference between the currents at the different areas of the surface of the wafer is greater than a pre...