US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 2 for "Semiconductor structure and manufacturing method therefor, and memory" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,420, issued on Dec. 2, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method therefor, and memory" was invented by Xingsong Su (Hefei, China), Weiping Bai (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and a conductive structure located above the substrate. The conductive structure includes a plurality of first conductive structures and second conductive structures that are spaced apart from each other and extend in a first direction. Lengths of the first conductive structures and lengths of the sec...