US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 16 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,163, issued on Dec. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Chengfeng Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate; and forming a first metal via structure, where the first metal via structure is provided in the substrate, and a top surface of the first metal via structure is flush with a top surface of the substrate, where the top surface of the first metal via structure is made...