US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 5 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,696, issued on Aug. 5, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Jifeng Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a gate structure being provided on a surface of the substrate, and a source region and a drain region being provided in the substrate at two sides of the gate structure, respectively; and a contact located on the substrate, the contact including a first contact located on the substrate and a se...