US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 5 for "Semiconductor structure and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,627, issued on Aug. 5, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and forming method thereof" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a semiconductor structure and a forming method thereof. The forming method includes: providing a base, where the base is provided with a plurality of bit line isolation trenches extending along a first direction and an isolation structure located in the bit line isolation trench; performing a patterned etching on the base to form a plurality of word line isola...