US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 5 for "Semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,940, issued on Aug. 5, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device" was invented by Yupeng Fan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a power down control circuit receiving a power down command signal and a chip selection signal, and generating a power down enable signal and a power down exit signal, here, a logic level of the power down enable signal is converted at a first edge of the power down command signal during a power down stage, and a logic level of the power down exit signal is converted at a second edge of the chip selection signal during a ...