US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 5 for "Method of forming semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,643, issued on Aug. 5, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of forming semiconductor structure and semiconductor structure" was invented by Liuyang Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a method of forming a semiconductor structure, and a semiconductor structure, including: a first stacked structure, a second stacked structure, and a third stacked structure are formed from top to bottom on a substrate; etching the first stacked structure by a first mask layer, to form a first patterned hard mask; formin...