US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 5 for "Method for fabricating semiconductor structure, and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,115, issued on Aug. 5, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor structure, and semiconductor structure" was invented by Jingwen Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for fabricating a semiconductor structure and a semiconductor structure. The method includes: providing a substrate having a plurality of active area; forming a plurality of bit lines arranged at intervals on the substrate, the plurality of bit lines having a plurality of first mask layers; forming a first dielectric layer on the substrate positioned between adjacent two ...