ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,624, issued on Aug. 5, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"2T0C semiconductor structure" was invented by Youming Liu (Hefei, China), Deyuan Xiao (Hefei, China) and Xingsong Su (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure. The semiconductor structure includes a substrate, a dielectric layer arranged on the substrate, and a plurality of memory cell layers. The plurality of memory cell layers are spaced in the dielectric layer along a first direction, and projections of any adjacent two of the plurality of memory cell layers on the substrate are overlapped. Each...