US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 26 for "Semiconductor structure and method of making the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,954, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method of making the same" was invented by Tieh-Chiang Wu (Hefei, China) and Lingxin Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a preparation method making it are disclosed. The semiconductor structure includes: a substrate, a bit line contact structure, a first epitaxial layer, a bit line and a second epitaxial layer. The structure includes bit line contact holes. The bit line contact structure is disposed in one of the bit line contact holes. The first epitaxial layer is epitaxia...