US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 26 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,304, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Qinghua Han (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to a semiconductor structure and a manufacturing method thereof. The method of manufacturing a semiconductor structure includes: providing a substrate; etching the substrate to form a plurality of body structures arranged at intervals in a first direction, wherein a space between adjacent ones of the body structures is filled with a first isolation layer, each of the body...