US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 26 for "Semiconductor structure and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,294, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a fabrication method thereof. The method for fabricating a semiconductor structure includes: providing a substrate, where a semiconductor stacked structure formed by alternately stacking first semiconductor layers and second semiconductor layers is formed on the substrate; patterning the semiconductor stacke...