US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 26 for "Semiconductor memory device with nanowire structure and forming method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,299, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor memory device with nanowire structure and forming method thereof" was invented by Min Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor memory device and a forming method thereof. The semiconductor memory device includes: a substrate; a nanowire structure suspended above the substrate, where the nanowire structure includes a channel region, as well as a source region and a drain region that are located at two ends of the channel region respectively, a size of the drain region is smaller than a size of t...