US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 26 for "Semiconductor device having channel regions distributed on two opposite sides of a gate electrode" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,300, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device having channel regions distributed on two opposite sides of a gate electrode" was invented by Mengmeng Yang (Hefei, China) and Yi Tang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor device and a forming method. The semiconductor device includes: a substrate; a memory array positioned on the substrate and at least including memory cells spaced along a first direction, each of the memory cells including a transistor, the transistor including a gate electrode, channel regions distributed on ...