US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 26 for "Method for fabricating semiconductor device and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,295, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor device and semiconductor device" was invented by Jun Xia (Hefei, China) and Shijie Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for fabricating a semiconductor device and the semiconductor device. The method includes: providing a semiconductor substrate having a first region and a second region; forming an initial mask layer on an upper surface of the substrate; patterning the initial mask layer, forming a first pattern mask having a first height on the first region, and form...