ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,953, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Electro static discharge circuit and memory" was invented by Yingdong Guo (Hefei, China), Kai Tian (Hefei, China), Wei Jiang (Hefei, China) and Jing Xu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are an Electro Static Discharge (ESD) circuit and a memory. The ESD circuit includes: a detection circuit and multiple electrostatic discharge circuits. The detection circuit includes at least one sub-detection circuit connected between a first power end and a second power end. Each sub-detection circuit generates a sub-trigger signal based o...