US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 19 for "Semiconductor structure including bit line compose of a metal layer and a metal silicide layer and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,161, issued on Aug. 19, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure including bit line compose of a metal layer and a metal silicide layer and manufacturing method thereof" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate provided with a plurality trenches arranged at intervals; a bit line at least located on a sidewall of the trench, ...